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TK110E10PL,S1X

Part No TK110E10PL,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Souring
Description MOSFET TO-220 PD=87W 1MHz PW MOSFET TRNS
Sample
Rohs State rohs
ECAD Module
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Category OEM Souring
Win Source Part Number 1469430-TK110E10PL,S1X
Manufacturer Toshiba Semiconductor and Storage
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.7mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 50 V
Power Dissipation (Max) 87W (Tc)
Operating Temperature 175°C
Grade -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Ultra Librarian 3D Model Ultra Librarian TK110E10PL,S1X CAD Model

Description

The TK110E10PL,S1X is a high-performance MOSFET from Toshiba, encapsulated in the industry-standard TO-220 package. It is designed to meet the demanding requirements of power switching applications. With a drain power dissipation (PD) of 87 Watts and a high-speed switching frequency of 1 MHz, this MOSFET transistor operates efficiently in power conversion and management circuits. The TK110E10PL,S1X is ideal for use in a variety of applications, including DC/DC converters, motor drives, and power supplies. Its robust design ensures reliability and longevity in harsh operational environments. Toshiba's innovative technology provides this MOSFET with low on-resistance and high switching speed, reducing power losses and improving overall system efficiency.

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