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TK100G06N1

Part No TK100G06N1
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 217117-TK100G06N1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK100G06N1 CAD Model

Description

The TK100G06N1 is an N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. This MOSFET is designed for efficient power conversion and management across a broad spectrum of applications. Its defining characteristics include low on-resistance, which minimizes conduction losses, and fast switching speeds, reducing switching losses. These contribute to improved overall system efficiency and performance. Typically available in a through-hole package, it's well-suited for applications demanding robust mechanical mounting and efficient heat dissipation.

Applications:

  • DC-DC Converters
  • AC-DC Power Supplies
  • Motor Control Circuits
  • Uninterruptible Power Supplies (UPS)
  • Power Management in Industrial Equipment

Features:

  • N-Channel MOSFET
  • Low Drain-Source On-Resistance (RDS(on)): Minimizes conduction losses for increased efficiency.
  • High Drain Current (ID) Capability: Enables handling substantial loads.
  • Fast Switching Speed: Reduces switching losses, suitable for high-frequency operation.
  • Through-Hole Package: Provides robust mechanical mounting and facilitates heat sinking.
  • High Avalanche Energy Rating: Offers improved ruggedness and reliability.

Benefits:

  • Improved Energy Efficiency: Reduced power losses from low on-resistance and fast switching.
  • Increased Power Density: High current capability in a compact design.
  • Enhanced System Reliability: Robust design with a high avalanche energy rating.
  • Simplified Thermal Management: Through-hole package aids in effective heat dissipation.
  • Cost-Effective Solution: Balances performance, reliability, and cost.

Additional Details:

The TK100G06N1 commonly features a drain-source voltage (VDS) rating around 60V and a continuous drain current (ID) rating that varies based on operating conditions; refer to the datasheet for specifics. The gate-source voltage (VGS) rating is typically ±20V. This MOSFET often utilizes advanced trench MOSFET technology, optimizing on-resistance and switching characteristics. Proper gate drive circuitry and thermal management practices are vital for optimal performance and reliability. Always consult the official datasheet for precise electrical parameters and application guidelines.

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