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TH58TVG7D2FBA8C

Part No TH58TVG7D2FBA8C
Manufacturer Toshiba Semiconductor and Storage
Catalog Unclassified Memory
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits(ICs)
Family Memory
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 216936-TH58TVG7D2FBA8C
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TH58TVG7D2FBA8C CAD Model

Description

The TH58TVG7D2FBA8C is a NAND flash memory product manufactured by Toshiba Semiconductor and Storage. This device is engineered to provide non-volatile storage solutions for a wide array of applications. It is a crucial component for retaining data in various electronic systems.

Applications

  • Solid State Drives (SSDs)
  • USB Flash Drives
  • Embedded Systems
  • Memory Cards (SD, microSD)
  • Mobile Devices (Smartphones, Tablets)

Features

  • High-Density NAND Flash Memory: Provides considerable storage capacity in a small form factor.
  • Multi-Level Cell (MLC) Technology: Stores multiple bits of data per cell, maximizing storage density.
  • High-Speed Data Transfer: Enables rapid read and write operations.
  • Low Power Consumption: Designed for energy-efficient performance.
  • Compact Package: Facilitates integration into small devices.
  • Reliable Data Storage: Guarantees data integrity and long-term data retention.

Benefits

  • Increased Storage Capacity: Empowers devices to store more data.
  • Faster Performance: Enhances application loading times and improves system responsiveness.
  • Extended Battery Life: Minimizes power consumption, thereby extending device usability.
  • Smaller Device Size: Supports the development of sleeker, more portable devices.
  • Enhanced Data Security: Offers robust data storage and protection.

Additional Details

The TH58TVG7D2FBA8C is built on NAND flash memory technology, offering non-volatile storage capabilities, meaning that data is preserved even when power is off. The device uses MLC technology, which enables the storage of multiple bits of data within a single memory cell, effectively increasing storage density. It is designed to operate within a defined voltage and temperature range. Detailed technical specifications, including capacity, voltage requirements, and operating temperatures, can be found in the official Toshiba datasheet for this part number.

The device is widely used in applications that demand high-density, high-performance storage solutions. Its compatibility with various host controllers and interfaces makes it suitable for a broad range of products. The NAND flash memory is precisely engineered to meet the rigorous requirements of modern electronic devices, ensuring optimum performance and reliability.

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