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TH58TEG9DDJBA89

Part No TH58TEG9DDJBA89
Manufacturer Toshiba Semiconductor and Storage
Catalog Flash
Description Toshiba 19nm 64GB Nand flash
Sample
Rohs State rohs
ECAD Module
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RoHS Compliant
Win Source Part Number 980238-TH58TEG9DDJBA89
Categories Flash
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TH58TEG9DDJBA89 CAD Model

Description

The TH58TEG9DDJBA89 is a NAND flash memory component manufactured by Toshiba Semiconductor and Storage. It's a high-density storage solution commonly used in a variety of electronic devices. NAND flash memory is non-volatile, meaning it retains data even when power is removed, making it ideal for storage applications.

Applications:

  • Solid State Drives (SSDs): Used as the primary storage medium in SSDs for laptops, desktops, and servers.
  • USB Flash Drives: Provides the storage capacity for portable USB drives.
  • Memory Cards: Employed in SD cards, microSD cards, and other memory card formats used in cameras, smartphones, and other devices.
  • Embedded Systems: Integrated into embedded systems for storing firmware, data, and applications.
  • Mobile Devices: Used in smartphones, tablets, and other mobile devices for storing operating systems, applications, and user data.

Features:

  • High Density: Offers substantial storage capacity in a small physical package.
  • Non-Volatile: Retains data even when power is off.
  • Fast Read/Write Speeds: Provides quick access to stored data, improving system performance.
  • Low Power Consumption: Operates efficiently, extending battery life in portable devices.
  • Durable: Withstands a large number of program/erase cycles.

Benefits:

  • Increased Storage Capacity: Allows for storing large amounts of data in a compact form factor.
  • Improved System Performance: Faster read/write speeds lead to quicker boot times and application loading.
  • Enhanced Data Reliability: Non-volatile memory ensures data is preserved even during power outages.
  • Extended Device Lifespan: Durable design withstands frequent data access.
  • Reduced Power Consumption: Contributes to longer battery life in portable devices.

Additional Details:

The TH58TEG9DDJBA89 utilizes advanced NAND flash technology to achieve high storage density and performance. It typically supports various interface standards, such as ONFI or Toggle DDR, to facilitate communication with host controllers. Key specifications include the storage capacity (e.g., 128GB, 256GB), read/write speeds, operating voltage, and operating temperature range. The endurance rating, measured in program/erase cycles, is also a critical parameter. Error correction codes (ECC) are usually implemented to ensure data integrity. Package types may vary depending on the specific application.

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