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TC58NYG0S3EBAI4(JRH)

Part No TC58NYG0S3EBAI4(JRH)
Manufacturer Toshiba Semiconductor and Storage
Catalog Misc Products
Sample
Rohs State Need to verify
ECAD Module
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Categories Uncategorized
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 843771-TC58NYG0S3EBAI4(JRH)
Ultra Librarian 3D Model Ultra Librarian TC58NYG0S3EBAI4(JRH) CAD Model

Description

The TC58NYG0S3EBAI4(JRH) is a NAND flash memory device manufactured by Toshiba Semiconductor and Storage. It is designed for high-density data storage in various applications, including mobile devices, solid-state drives (SSDs), and embedded systems. This NAND flash memory utilizes advanced process technology to achieve high performance and reliability.

Applications:

  • Smartphones and tablets: Providing storage for operating systems, applications, and user data.
  • Solid-state drives (SSDs): Storing operating systems, applications, and user files in computers and laptops.
  • Embedded systems: Storing firmware and data in industrial control systems, automotive electronics, and IoT devices.
  • USB flash drives: Portable storage for files and documents.
  • Memory cards: SD cards and microSD cards for cameras, smartphones, and other portable devices.

Features:

  • High-density storage: Offers a large storage capacity in a small form factor.
  • Fast read and write speeds: Enables quick data access and transfer.
  • Low power consumption: Extends battery life in portable devices.
  • High endurance: Withstands a large number of program/erase cycles.
  • Error correction code (ECC): Detects and corrects errors to ensure data integrity.
  • Advanced process technology: Provides high performance and reliability.
  • Compact package: Saves board space.

Benefits:

  • Large storage capacity: Allows users to store more data.
  • Improved system performance: Fast read and write speeds enhance application responsiveness.
  • Extended battery life: Low power consumption reduces energy drain.
  • Reliable data storage: ECC ensures data integrity.
  • Compact design: Enables smaller and lighter devices.

Additional Details:

The TC58NYG0S3EBAI4(JRH) uses a specific NAND flash technology (likely TLC or QLC). The exact storage capacity can be found in the datasheet. The device communicates with the host system via a NAND flash interface. Power consumption, read/write speeds, and endurance ratings are detailed in the product specifications. The (JRH) suffix likely refers to specific binning or packaging options, so consulting the datasheet is crucial for exact specifications.

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