The TC58NVG4D2FTA00 is a NAND Flash memory device manufactured by Toshiba Semiconductor and Storage. It's a high-capacity storage solution commonly used in various electronic devices for data storage and retrieval.

Applications

  
• Solid State Drives (SSDs)
  
• USB Flash Drives
  
• Memory Cards (SD, microSD)
  
• Mobile Phones
  
• Tablets
  
• Digital Cameras
  
• Embedded Systems requiring non-volatile storage

Features

  
• High-density NAND Flash memory
  
• Multi-Level Cell (MLC) technology for increased storage capacity
  
• High read/write performance
  
• Low power consumption
  
• Small form factor
  
• RoHS compliant
  
• Operating Temperature: -25°C to +85°C
  
• Supply voltage: 2.7V to 3.6V
  
• Page Size: Typically 8KB or 16KB (Consult Datasheet)
  
• Block Size: Typically 512KB or 1MB (Consult Datasheet)

Benefits

  
• Increased storage capacity for data-intensive applications
  
• Faster boot times and application loading compared to traditional hard drives
  
• Improved system responsiveness and overall performance
  
• Extended battery life due to low power consumption
  
• Enhanced durability and reliability compared to mechanical storage devices
  
• Smaller device footprint, enabling more compact designs

Additional Details

This NAND Flash memory utilizes a Multi-Level Cell (MLC) architecture, allowing it to store multiple bits of data per cell, effectively increasing storage density. The device supports high-speed data transfer rates, contributing to faster read and write operations. Its low power consumption makes it suitable for portable devices where battery life is a critical factor.  The specific capacity, performance characteristics, and interface details (e.g., ONFI) are defined in the official Toshiba datasheet for the TC58NVG4D2FTA00.