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Same model may have multiple batches, images only for reference.
TC58NVG0S3HBAI6 Real Image
Same model may have multiple batches, images only for reference.

TC58NVG0S3HBAI6

Part No TC58NVG0S3HBAI6
Manufacturer Toshiba Semiconductor and Storage
Catalog Flash
Description NAND Flash Memory(SLC Middle Capacity) | IC FLASH 1G PARALLEL 67VFBGA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer Toshiba Memory America, Inc.
Packaging Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 1Gb (128M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Supply Voltage (V) 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C
Mounting Style SMD
Manufacturer Package 67-VFBGA
Supplier Device Package 67-VFBGA (6.5x8)
Manufacturer Pack Quantity 338
MSL Level 3 (168 Hours)
Win Source Part Number 1264761-TC58NVG0S3HBAI6
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TC58NVG0S3HBAI6 CAD Model

Description

The TC58NVG0S3HBAI6 is a 1Gb (128M x 8) NAND flash memory device manufactured by Toshiba Memory America, Inc.

  • Manufacturer: Toshiba Memory America, Inc.
  • Product Name: TC58NVG0S3HBAI6
  • Memory Size: 1Gb (128M x 8)
  • Access Time: 25ns
  • Write Cycle Time: 25ns (word, page)
  • Memory Interface: Parallel
  • Package: 67-VFBGA (6.5x8)
  • Operating Temperature: -40°C to 85°C
  • Supply Voltage: 2.7V ~ 3.6V
  • Popularity: Popular
  • Supply and Demand Status: Balanced

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154+ $1.8870 $290.5980
205+ $1.6918 $346.8190
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