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Same model may have multiple batches, images only for reference.
TC58BVG1S3HBAI4 Real Image
Same model may have multiple batches, images only for reference.

TC58BVG1S3HBAI4

Part No TC58BVG1S3HBAI4
Manufacturer Toshiba Semiconductor and Storage
Catalog Unclassified Memory
Description 2GB SLC BENAND 24NM BGA 9X11 (EE
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 2Gb (256M x 8)
Write Cycle Time - Word, Page 25ns
Supply Voltage (V) 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C
Mounting Style SMD
Manufacturer Package 63-VFBGA
Supplier Device Package 63-TFBGA (9x11)
Manufacturer Pack Quantity 210
MSL Level 3 (168 Hours)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 814351-TC58BVG1S3HBAI4
Ultra Librarian 3D Model Ultra Librarian TC58BVG1S3HBAI4 CAD Model

Description

The Toshiba Semiconductor and Storage TC58BVG1S3HBAI4 is a 2Gb (256M x 8) non-volatile FLASH - NAND (SLC) memory chip with a write cycle time of 25ns.

  • Memory Type: FLASH - NAND (SLC)
  • Memory Size: 2Gb (256M x 8)
  • Write Cycle Time: 25ns
  • Temperature Range: -40°C to 85°C
  • Supply Voltage: 2.7V ~ 3.6V
  • Mounting: SMD
  • Package: 63-TFBGA (9x11)
  • Supplier Device Package: 63-TFBGA (9x11)
  • Memory Format: FLASH
  • Memory Interface: No memory interface
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 210

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