The SSM6N7002BFE(T5L,F) is an N-Channel enhancement mode MOSFET produced by Toshiba Semiconductor and Storage. This MOSFET is designed for high-speed switching applications and is optimized for low-voltage drive. Its low on-resistance ensures minimal power loss, contributing to improved efficiency in various electronic circuits. The compact surface-mount package is suitable for space-constrained applications.

Applications

• High-Speed Switching
• Load Switching
• DC-DC Converters
• Power Management Circuits

Features

• N-Channel MOSFET
• Low on-resistance (RDS(ON))
• Low voltage drive
• Small surface mount package

Benefits

• Improved efficiency due to low on-resistance, minimizing power dissipation.
• Simplified driving circuitry due to low voltage drive capability.
• Reduced board space requirements due to the compact surface mount package.

Technical Specifications

The SSM6N7002BFE(T5L,F) typically features a drain-source voltage (VDS) rating of 60V, a gate-source voltage (VGS) rating of ±20V, and a drain current (ID) rating that varies based on the specific operating conditions. The on-resistance (RDS(ON)) is a crucial parameter, typically in the range of a few ohms. The gate threshold voltage (VGS(th)) is an important characteristic, usually around 1V to 3V. It's important to consult the Toshiba datasheet for the SSM6N7002BFE(T5L,F) for specific values.

The package is a small surface-mount type (SOT-23 or similar). It also is RoHS compliant.