The SSM6L16FE(TE85L) is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage. It is optimized for use in load switching and power management applications. The device features low on-resistance, which minimizes power dissipation and contributes to higher efficiency. Its small form factor makes it ideal for portable and space-constrained applications.

Applications

• Load Switches
• DC-DC Converters
• Power Management Circuits in Mobile Devices

Features

• N-Channel MOSFET
• Low Drain-Source On-Resistance (RDS(ON))
• Small Surface Mount Package

Benefits

• Reduced power loss and improved efficiency due to the low on-resistance characteristic.
• Space-saving design enabling use in compact devices.

Technical Specifications

The SSM6L16FE(TE85L) typically features a Drain-Source Voltage (VDS) rating of 20V. The Gate-Source Voltage (VGS) rating is usually ±8V. The Drain Current (ID) is dependent upon operating conditions and package temperature. The on-resistance (RDS(ON)) is a critical specification and is typically very low. The Gate Threshold Voltage (VGS(th)) is also a key parameter. The specific values for these parameters can be found in the official Toshiba datasheet for the SSM6L16FE(TE85L).

The package is a surface-mount type to allow for easy assembly. The component complies with RoHS standards.