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SSM6K25FE(TE85L,F)

Part No SSM6K25FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description Trans MOSFET N-CH Si 20V 0.5A 6-Pin ES T/R
Sample
Rohs State rohs
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Manufacturer Toshiba Semiconductor and Storage
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 193113-SSM6K25FE(TE85L,F)
Family Name SSM6K25FE
Introduction Date February 06, 2004
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6K25FE(TE85L,F) CAD Model

Description

The SSM6K25FE(TE85L,F) is an N-channel MOSFET from Toshiba Semiconductor and Storage, designed for high-speed switching applications, load switches, and DC-DC converters. The (TE85L,F) suffix signifies specific tape and reel packaging optimized for automated assembly lines, along with lead-free plating.

Applications

  • High-Speed Switching
  • Load Switches
  • DC-DC Converters
  • Power Management in Portable Devices
  • Motor Control Circuits
  • Automated PCB Assembly

Features

  • N-channel MOSFET
  • Low Drain-Source On-Resistance (RDS(on))
  • High-Speed Switching
  • Small Surface Mount Package
  • Low Gate Charge
  • Lead-Free Plating
  • Tape and Reel Packaging (TE85L,F) for automated assembly

Benefits

  • High Efficiency: Low RDS(on) minimizes power loss and improves overall efficiency.
  • Compact Design: Small surface mount package enables high-density board layouts.
  • Fast Switching: Suitable for high-frequency switching applications.
  • Reliable Performance: Ensures stable operation in various environments.
  • Reduced Heat Generation: Lower RDS(on) results in less heat dissipation.
  • Optimized for Automated Assembly: The (TE85L,F) packaging configuration facilitates efficient handling by pick-and-place machines, improving production throughput.

Specifications

The SSM6K25FE(TE85L,F) typically features a drain-source voltage (VDSS) of 30V, a gate-source voltage (VGSS) of ±20V, and a drain current (ID) optimized for intended applications. RDS(on) is a key specification, provided in milliohms at a given gate-source voltage. The packaging is generally SOT-23 or similar small surface-mount. The (TE85L,F) designates a specific tape and reel format. Refer to the datasheet for detailed specifications.

This MOSFET offers efficiency and fast switching. The compact size, reliable performance, and automated assembly-friendly packaging make it a suitable choice for portable devices, DC-DC converters, and other applications where both performance and manufacturing efficiency are critical.

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Pricing & Ordering

Quantity Unit Price Ext. Price
385+ $0.1513 $58.2505
930+ $0.1247 $115.9710
1,430+ $0.1213 $173.4590
1,985+ $0.1167 $231.6495
2,555+ $0.1132 $289.2260
3,410+ $0.1016 $346.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,000 pieces
MOQ: 385 pcs
Order Increment : 1 pcs
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