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SSM3K16FU(TE85L,F)

Part No SSM3K16FU(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Electronic Wholesale
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
RoHS State Request Verification
Win Source Part Number 759311-SSM3K16FU(TE85L,F)
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SSM3K16FU(TE85L,F) CAD Model

Description

The SSM3K16FU(TE85L,F) is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba Semiconductor and Storage. P-channel MOSFETs are commonly used as switches or amplifiers in electronic circuits. This particular MOSFET is designed for low-voltage applications and is known for its low on-resistance, which minimizes power loss during switching.

Applications

  • Load switching: Used to control the power supply to various loads in electronic circuits.
  • Power management circuits: Employed in DC-DC converters and other power management applications.
  • Portable devices: Found in smartphones, tablets, and other battery-powered devices.
  • LED lighting: Used for dimming and controlling LEDs.
  • Analog switches: Can be used as analog switches in signal routing applications.

Features

  • P-channel MOSFET: Allows for easy control with a negative gate voltage.
  • Low on-resistance: Minimizes power loss and heat generation.
  • Low gate threshold voltage: Requires a small gate voltage to turn on.
  • Surface mount package: Allows for easy assembly on printed circuit boards.
  • Small package size: Saves space on the circuit board.
  • RoHS compliant: Meets environmental regulations.
  • Lead-free: Complies with lead-free requirements.

Benefits

  • Efficient switching: Low on-resistance minimizes power loss and improves efficiency.
  • Simplified drive circuitry: Low gate threshold voltage simplifies the design of the gate drive circuit.
  • Compact design: Small package size allows for high-density circuit layouts.
  • Energy saving: Low power consumption extends battery life in portable applications.
  • Improved thermal performance: Low on-resistance reduces heat generation.
  • Reliable operation: Designed for robust and reliable performance.
  • Cost-effective solution: Provides efficient switching at a reasonable cost.

Additional Details

The SSM3K16FU(TE85L,F) has key specifications including drain-source voltage (Vds), gate-source voltage (Vgs), continuous drain current (Id), and on-resistance (Rds(on)). The TE85L suffix typically indicates a specific packaging configuration, such as a SOT-23 or similar small surface mount package, and the 'F' may indicate that it is Halogen-Free. The gate threshold voltage is an important parameter to consider when designing the gate drive circuit. It is crucial to ensure that the gate voltage is sufficient to fully turn on the MOSFET and minimize on-resistance. The thermal resistance of the package is also an important factor to consider, especially at higher drain currents. Proper PCB layout and heat sinking may be necessary to dissipate heat and ensure reliable operation.

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