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SSM3K15FV(TPL3.Z)

Part No SSM3K15FV(TPL3.Z)
Manufacturer Toshiba Semiconductor and Storage
Catalog Misc Products
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Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 838826-SSM3K15FV(TPL3.Z)
Ultra Librarian 3D Model Ultra Librarian SSM3K15FV(TPL3.Z) CAD Model

Description

The SSM3K15FV(TPL3.Z) is an N-Channel MOSFET from Toshiba Semiconductor and Storage, tailored for high-speed switching applications. This surface-mount device boasts low on-resistance and fast switching speeds, making it ideal for power management, load switching, and DC-DC conversion in portable and compact electronic devices. Its small footprint enables high-density board designs.

Applications

  • DC-DC Converters: Used in voltage regulation circuits to convert DC voltage levels efficiently.
  • Load Switching: Controls power delivery to various loads within a system, enabling or disabling circuits as needed.
  • Power Management in Portable Devices: Optimizes power consumption in smartphones, tablets, and other portable electronics.
  • LED Drivers: Regulates current flow to LEDs for consistent brightness and long life.

Features

  • N-Channel MOSFET: Offers efficient switching capabilities.
  • Low On-Resistance (Rds(on)): Reduces power loss during conduction, improving overall efficiency.
  • Fast Switching Speed: Minimizes switching losses at higher frequencies.
  • Surface Mount Package: Facilitates automated assembly and reduces board space.

Benefits

  • Improved Efficiency: Low on-resistance minimizes power dissipation, contributing to energy savings.
  • Miniaturized Design: Small package footprint allows for compact product designs.
  • Enhanced Thermal Performance: Efficient heat dissipation improves reliability and extends product lifespan.
  • Simplified Circuit Design: N-channel configuration offers straightforward integration into common circuit topologies.

Additional Details

The SSM3K15FV(TPL3.Z) typically features a drain-source voltage (Vds) suitable for low-voltage applications. The gate threshold voltage (Vgs(th)) is a critical parameter for determining the minimum gate voltage required for conduction. Detailed specifications, including on-resistance characteristics, capacitance values, and thermal resistance, are available in the datasheet. It is generally supplied in tape and reel packaging for automated assembly. Proper thermal management techniques, such as appropriate PCB layout and heat sinking, are essential for maximizing device reliability, particularly in higher-current applications. Always ensure that the gate-source voltage remains within the absolute maximum ratings to prevent damage to the MOSFET. Refer to the manufacturer's datasheet for complete specifications and application guidelines.

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