The SSM3K104TU is a silicon N-channel MOSFET from Toshiba Semiconductor and Storage, designed for high-speed switching applications. Its compact surface-mount package makes it suitable for use in space-constrained applications.

Applications

• High-Speed Switching
• Load Switching
• DC-DC Converters
• Power Management Circuits in Portable Devices
• Signal Amplification

Features

• N-Channel MOSFET
• Low on-resistance (RDS(ON))
• Low gate charge
• Small surface-mount package (SOT-23F)
• High-speed switching capability
• Lead-free and RoHS compliant

Benefits

• Improved Efficiency: Low RDS(ON) minimizes power loss during switching, enhancing energy efficiency.
• Reduced Board Space: Small SOT-23F package enables compact designs, saving board space.
• High-Speed Switching: Fast switching speeds improve application performance.
• Simplified Design: Easy to use with minimal external components required.
• Environmentally Friendly: Lead-free and RoHS compliant.

Technical Specifications

The SSM3K104TU typically features a drain-source voltage (VDSS) of 20V, a gate-source voltage (VGSS) of ±8V, and a continuous drain current (ID) of around 3A. The on-resistance (RDS(ON)) is typically less than 0.07 ohms at VGS = 4.5V. It operates over a temperature range of -55°C to +150°C. Always consult the official datasheet for precise specifications.

This MOSFET is well-suited for applications where small size, high efficiency, and high-speed switching are critical. It is commonly used in portable devices and other battery-powered systems.