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SSM3J113TU

Part No SSM3J113TU
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 192866-SSM3J113TU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3J113TU CAD Model

Description

The SSM3J113TU is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for load switching and power management in portable devices. It features low on-resistance, fast switching speed, and a compact package, making it suitable for space-constrained applications that demand efficient power control.

Applications:

  • Load Switching: Used to control power to different circuits and components in portable devices like smartphones, tablets, and wearables.
  • DC-DC Conversion: Employed in DC-DC converters for step-up or step-down voltage conversion.
  • Power Management: Integrated into power management units (PMUs) for efficient voltage regulation and distribution.
  • Battery Management Systems (BMS): Used in battery chargers and protection circuits for managing battery power.
  • Wearable Devices: Suitable for use in smartwatches, fitness trackers, and other wearable electronics.

Features:

  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Fast Switching Speed: Enables efficient operation in high-frequency applications.
  • Low Gate Charge (Qg): Reduces the power required to drive the MOSFET, contributing to higher efficiency.
  • Compact Package: Available in small surface-mount packages, ideal for space-saving designs.
  • Halogen-Free and RoHS Compliant: Meets environmental standards for lead-free manufacturing.

Benefits:

  • Improved Power Efficiency: Reduces power dissipation and extends battery life in portable devices.
  • Compact Design: Small package allows for integration into densely populated circuit boards.
  • Enhanced Thermal Performance: Efficient switching minimizes heat generation.
  • Simplified Circuit Design: Easy to use and integrate into existing circuits.
  • Increased Reliability: Robust design ensures stable performance over a wide range of operating conditions.

Additional Details:

The SSM3J113TU has a drain-source voltage (VDSS) rating suitable for low-voltage applications. The gate-source voltage (VGSS) rating ensures safe operation within specified limits. It is often used in mobile phones, digital cameras, and other portable devices due to its low profile and excellent power efficiency.

This MOSFET can be used in conjunction with other power management ICs to create comprehensive power solutions. Its characteristics make it well-suited for applications where efficiency, size, and reliability are critical.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,100 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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