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Same model may have multiple batches, images only for reference.
RN47A3JE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN47A3JE(TE85L,F)

Part No RN47A3JE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ESV
Datasheet
RN47A3JE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Style SMD/SMT
Package SOT-553
Manufacturer Device Package ESV
Win Source Part Number 104085-RN47A3JE(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN47A3JE(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN47A3JE(TE85L,F) is a pre-biased dual NPN and PNP transistor array designed for use in discrete semiconductor products.

  • Maximum Power: 100mW
  • Collector-Emitter Breakdown Voltage: 50V
  • Case/Package: SOT-553
  • Supply: Reel
  • Current Collector: 100mA
  • Typical Gain (hFE): 50 @ 10mA, 5V

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