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Same model may have multiple batches, images only for reference.
RN2111MFV,L3F
Same model may have multiple batches, images only for reference.

RN2111MFV,L3F

Part No RN2111MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V 0.1A VESM / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Power - Max 150 mW
Mounting SMD (SMT)
Package / Case SOT-723
Supplier Device Package VESM
Base Product Number RN2111
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names RN2111MFVL3F
Standard Package 8,000
Win Source Part Number 978197-RN2111MFV,L3F
Ultra Librarian 3D Model Ultra Librarian RN2111MFV,L3F CAD Model

Description

The RN2111MFV, L3F is a PNP pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It is a discrete semiconductor product with a maximum power of 150 mW, and a maximum voltage of 50 V.

  • Package: Tape and Reel (TR)
  • Standard Package Quantity: 8,000
  • Mounting: Surface Mount Device (SMD)

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