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RN1310(TE85L,F)

Name: RN1310(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: 296971
Availability: InStock
Rating: 4.84 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	RN1310(TE85L,F)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS NPN 0.1W USM
Datasheet	RN1310(TE85L,F) Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Active
Transistor Polarity	NPN - Pre-Biased
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	4.7k
Typical Gain (hFE) (Min)	120 @ 1mA, 5V
Max Vce (sat)	300mV @ 250μA, 5mA
Collector Cut-off Current(Max)	100nA (ICBO)
Frequency - Transition	250MHz
Maximum Power Dissipation	100mW
Mounting	SMD (SMT)
Case / Package	USM
Win Source Part Number	099623-RN1310(TE85L,F)
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian RN1310(TE85L,F) CAD Model

Alternative Products

Description

The RN1310(TE85L,F) is a transistor integrated circuit manufactured by Toshiba Semiconductor and Storage.

This IC is part of the: discrete semiconductor products family and is popular in the market.
It has a: medium popularity in the market and is widely used in various electronic devices.
The IC has a: maximum current collector of 100mA and a VCEO maximum collector-emitter breakdown voltage of 50V.
It has a: maximum power dissipation of 100mW and a typical gain (hFE) (Min) of 120 @ 1mA, 5V.
However, its: supply and demand status is balanced.

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RN1310(TE85L,F)

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