The RN1302,LF(T is a small signal N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for low voltage, low current switching applications. Its low on-resistance and fast switching speed make it suitable for use in portable devices, power management circuits, and load switching.

Applications

• Load switching: Enables efficient switching of power to various loads.
• DC-DC converters: Used in power conversion circuits for improved efficiency.
• Battery management systems: Protects batteries from overcharge and over-discharge.
• Portable devices: Ideal for use in smartphones, tablets, and other battery-powered devices.
• LED drivers: Used to control the current to LEDs.

Features

• N-channel MOSFET: Enhances switching speed and efficiency.
• Low on-resistance: Reduces power loss and improves efficiency.
• Fast switching speed: Enables high-frequency operation.
• Small package size: Available in a compact SOT-23 package for space-constrained applications.
• Low gate threshold voltage: Allows for operation at low voltage levels.
• Operating Temperature: Wide operating temperature range.
• Drain-Source Voltage: VDS = 30V

Benefits

• Improved efficiency: Low on-resistance minimizes power loss.
• Reduced heat generation: Efficient operation reduces heat dissipation.
• Space-saving design: Compact SOT-23 package enables integration into small devices.
• Longer battery life: Low power consumption extends battery life in portable devices.
• Enhanced protection: Provides protection against overvoltage and overcurrent.

Additional Details

The RN1302,LF(T has a drain-source voltage (VDS) rating of 30V and a drain current (ID) rating of 0.5A. It features a gate threshold voltage (VGS(th)) of 1.5V. The on-resistance (RDS(on)) is typically 1.5Ω at a gate-source voltage of 4.5V. The diode is available in a SOT-23 package.

This mosfet is Halogen free, and RoHS compliant. The RN1302,LF(T offers a good balance of performance and size making it suitable for a wide array of applications.