The Q2SC4917 is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for high-frequency power amplifier applications. Its robust construction and optimized design allow it to deliver reliable performance in demanding environments.

Applications

• High-frequency power amplifiers
• Oscillator circuits
• RF Transmitters
• Microwave communication systems
• High-speed switching circuits

Features

• NPN Silicon Epitaxial Planar Transistor
• High power gain
• Low noise figure
• High collector current capability
• Excellent high-frequency characteristics
• RoHS Compliant

Benefits

• Enhanced signal amplification for improved communication range and clarity.
• Reduced noise interference, ensuring signal integrity.
• Efficient power usage, leading to energy savings and reduced heat generation.
• Increased reliability and longevity of electronic devices.
• Simplified circuit design due to its versatile application range.

Technical Specifications

The Q2SC4917 transistor has a collector-emitter voltage (VCEO) rating and a high collector current (IC) rating. Its transition frequency (fT) is optimized for high-frequency operation. It is typically available in a small form factor package to facilitate high-density circuit board assembly. More precise specifications can be found in the official Toshiba datasheet.

This transistor’s design and materials are selected to ensure stability and consistent performance over a wide range of operating conditions. It is commonly used in professional communication equipment and high-end audio amplifiers where signal fidelity and power efficiency are critical.