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Same model may have multiple batches, images only for reference.
HN2D01JE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

HN2D01JE(TE85L,F)

Part No HN2D01JE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY GP 80V 100MA ESV
Datasheet
HN2D01JE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Diode Configuration 2 Independent
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 80V
Current - Average Rectified (Io) (per Diode) 100mA
Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA
Reverse Recovery Time (trr) 1.6ns
Current - Reverse Leakage @ Vr 500nA @ 80V
Operating Temperature - Junction 150°C (Max)
Mounting SMD (SMT)
Case / Package ESV
Win Source Part Number 096342-HN2D01JE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HN2D01JE(TE85L,F) CAD Model

Description

This standard diode is manufactured by Toshiba Semiconductor and Storage. It has a maximum DC reverse voltage of 80V and a forward voltage of 1.2V at 100mA. The product has a reverse recovery time of 1.6ns and a current leakage of 500nA at 80V. The supply and demand status is sufficient.

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Quantity Unit Price Ext. Price
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1,395+ $0.0717 $100.0215
2,160+ $0.0695 $150.1200
2,980+ $0.0672 $200.2560
3,850+ $0.0650 $250.2500
5,150+ $0.0583 $300.2450
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Availability: 2,000 pieces
MOQ: 575 pcs
Order Increment : 1 pcs
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