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Same model may have multiple batches, images only for reference.
GT8G131-TE12L-Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

GT8G131-TE12L-Q

Part No GT8G131-TE12L-Q
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family IGBTs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 269913-GT8G131-TE12L-Q
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian GT8G131-TE12L-Q CAD Model

Description

The Toshiba GT8G131-TE12L-Q is a single IGBT (Insulated Gate Bipolar Transistor) designed for use in discrete semiconductor products. This component is manufactured by Toshiba Semiconductor and Storage and has a low popularity rating. This IGBT has a high input impedance and low on-state voltage drop, making it ideal for use in high power switching applications.

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