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Same model may have multiple batches, images only for reference.
GT40RR21(STA1,E
Same model may have multiple batches, images only for reference.

GT40RR21(STA1,E

Part No GT40RR21(STA1,E
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description PB-F IGBT / TRANSISTOR TO-3PN IC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Toshiba Semiconductor and Storage
Package Tube
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 40A
Power - Max 230 W
Switching Energy -, 540µJ (off)
Input Type Standard
Test Condition 280V, 40A, 10Ohm, 20V
Reverse Recovery Time (trr) 600 ns
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Base Product Number GT40RR21
Standard Package 25 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1022114-GT40RR21(STA1,E
Ultra Librarian 3D Model Ultra Librarian GT40RR21(STA1,E CAD Model

Description

The GT40RR21 is a single IGBT (Insulated Gate Bipolar Transistor) from Toshiba Semiconductor and Storage.

  • Category: Discrete semiconductor products
  • Design: Specifically designed for high-power applications
  • Maximum Power Rating: 230W
  • Reverse Recovery Time (trr): 600ns
  • Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current (Ic): 40A
  • Voltage Drop (Vce(on)): 2.8V @ a gate-emitter voltage (Vge) of 15V and a collector current (Ic) of 40A
  • Mounting: Through-hole technology
  • Package: TO-3P-3, SC-65-3
  • Status: Active
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)
  • HTSUS Code: 8541.29.0095

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