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Same model may have multiple batches, images only for reference.
GT30J121(Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

GT30J121(Q)

Part No GT30J121(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description IGBT 600V 30A 170W TO3PN / IGBT 600 V 30 A 170 W Through Hole TO-3P(N)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Toshiba Semiconductor and Storage
Package Tube
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
Power - Max 170 W
Switching Energy 1mJ (on), 800µJ (off)
Input Type Standard
Td (on/off) @ 25°C 90ns/300ns
Test Condition 300V, 30A, 24Ohm, 15V
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Base Product Number GT30J121
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1061320-GT30J121(Q)
Ultra Librarian 3D Model Ultra Librarian GT30J121(Q) CAD Model

Description

The GT30J121 is a single IGBT transistor from Toshiba Semiconductor and Storage.

  • Voltage Rating: 600V
  • Current Rating: 30A
  • Maximum Power: 170W
  • Breakdown Voltage: 50V
  • Clamping Voltage: 72.7V @ peak pulse power of 500W
  • Switching Energy (On): 1mJ
  • Switching Energy (Off): 800μJ
  • Td (on/off): 90ns/300ns @ a test condition of 300V, 30A, 24Ohm, 15V
  • Mounting Type: Through-hole
  • Package: TO-3P-3, SC-65-3
  • Standard Package: 50

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