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Same model may have multiple batches, images only for reference.
GT20J341,S4X(S
Same model may have multiple batches, images only for reference.

GT20J341,S4X(S

Part No GT20J341,S4X(S
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description DISCRETE IGBT TRANSISTOR TO-220S
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Toshiba Semiconductor and Storage
Package Tube
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 20 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A
Power - Max 45 W
Switching Energy 500µJ (on), 400µJ (off)
Input Type Standard
Td (on/off) @ 25°C 60ns/240ns
Test Condition 300V, 20A, 33Ohm, 15V
Reverse Recovery Time (trr) 90 ns
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220SIS
Standard Package 50 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1006661-GT20J341,S4X(S
Ultra Librarian 3D Model Ultra Librarian GT20J341,S4X(S CAD Model

Description

The GT20J341,S4X(S is a single IGBT (Insulated Gate Bipolar Transistor) manufactured by Toshiba Semiconductor and Storage.

  • Category: discrete semiconductor products
  • Application: power applications
  • Power Rating: 45W
  • Reverse Recovery Time (trr): 90ns
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current (Ic): 20A
  • Voltage Drop (Vce(on)): 2V @ Vge of 15V and Ic of 20A
  • Switching Energy (on): 500μJ
  • Switching Energy (off): 400μJ
  • Mounting Type: through-hole
  • Package: TO-220-3 Full Pack
  • Supplier Device Package: TO-220SIS
  • Product Status: active
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)
  • HTSUS Code: 8541.29.0095

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