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Same model may have multiple batches, images only for reference.
DF10G6M4N,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

DF10G6M4N,LF

Part No DF10G6M4N,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog TVS - Diodes
Description ESD Protection Diodes / TVS Diodes ESD Protection Diode
Datasheet
DF10G6M4N,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Circuit Protection
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Type Zener
Bidirectional Channels 4
STAND-OFF Voltage (Vwm) 5.5V (Max)
Minimum Breakdown Voltage 5.6V
Max Clamping Voltage 25V
Peak Pulse Current(Ippm) 2A (8/20μs)
Power Dissipation - Pd 30W
Applications General Purpose
Capacitance @ Frequency 0.2pF @ 1MHz
Mounting SMD (SMT)
Case / Package 10-DFN (2.5x1)
Win Source Part Number 1032852-DF10G6M4N,LF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name DF10G6M4N
ECCN EAR99
Country of Origin China
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian DF10G6M4N,LF CAD Model

Description

Toshiba Semiconductor and Storage's DF10G6M4N Zener diode is a reliable choice for general purpose applications.

  • Maximum Stand-Off Voltage: 5.5V
  • Minimum Breakdown Voltage: 5.6V
  • Number of Channels: 4
  • Diode Configuration: Bidirectional
  • Capacitance: 0.2pF @ 1MHz
  • Family: DF10G6M4N
  • Package: 10-DFN (2.5x1)
  • Peak Pulse Current: 2A (8/20μs)
  • Power Dissipation: 30W
  • ECCN: EAR99
  • Estimated EOL Date: 2027

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