The 2SK1642 is an N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. This MOSFET is specifically designed for high-speed switching applications, such as in switching power supplies, DC-DC converters, and motor control circuits. It features low on-resistance and fast switching characteristics, which contribute to improved efficiency and reduced power loss in these applications.

Applications:

• Switching Power Supplies
• DC-DC Converters
• Motor Control Circuits
• Uninterruptible Power Supplies (UPS)
• Power Inverters

Features:

• N-Channel MOSFET
• Low On-Resistance: RDS(on) = 0.3 Ω (Typical) at VGS = 10V
• High Drain Current: ID = 8 A
• Fast Switching Speed
• High Avalanche Energy Capability

Benefits:

• Improved power efficiency in switching applications
• Reduced heat generation due to low on-resistance
• Enhanced system reliability
• Compact and efficient power circuit design

Additional Details:

Absolute Maximum Ratings:

• Drain-Source Voltage (VDSS): 450V
• Gate-Source Voltage (VGSS): ±20V
• Drain Current (ID): 8A
• Pulsed Drain Current (IDP): 24A
• Single Pulse Avalanche Energy (EAS): 200 mJ
• Channel Dissipation (Pch): 40 W (Tc = 25°C)
• Junction Temperature (Tj): 150°C
• Storage Temperature (Tstg): -55°C to +150°C

Electrical Characteristics (at Ta=25°C):

• Gate Threshold Voltage (Vth): 2.0 to 4.0 V (VDS = 10V, ID = 1mA)
• Drain-Source On-Resistance (RDS(on)): 0.3 Ω (Typical) at VGS = 10V, ID = 4A
• Forward Transfer Admittance (|Yfs|): 4 S (Typical) at VDS = 10V, ID = 4A
• Input Capacitance (Ciss): 800 pF (Typical)
• Output Capacitance (Coss): 100 pF (Typical)
• Reverse Transfer Capacitance (Crss): 30 pF (Typical)

The 2SK1642 is typically available in a TO-220 package. Always refer to the official Toshiba datasheet for precise specifications and application guidance.