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2SJ464(PP,F)

Part No 2SJ464(PP,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET P-CH Si 100V 18A 3-Pin(3+Tab) TO-220NIS
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 158657-2SJ464(PP,F)
Popularity Low
Supply and Demand Status Balance
Family Name 2SJ464
Introduction Date December 17, 1996
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SJ464(PP,F) CAD Model

Description

The 2SJ464(PP,F) is an advanced iteration of the P-channel MOSFET, uniquely designed to meet the demands of today's high-performance electronic applications. This MOSFET offers enhanced operational efficiency, characterized by a sophisticated design that caters to complex power control circuits while optimizing power consumption. It is perfectly suited for environments where space and performance are top priorities.

Applications

  • Advanced communication equipment
  • Portable and wearable devices
  • Energy-efficient lighting systems
  • Automotive electronics
  • Renewable energy systems

Features and Benefits

  • Precise voltage control: Ensures stable and reliable voltage regulation, contributing to improved device longevity and performance.
  • High current capacity: Suitable for high-current applications, delivering outstanding power management and operational reliability.
  • Enhanced efficiency: With reduced power loss, the device maximizes output efficiency, crucial for battery-dependent devices.
  • Versatile compatibility: The MOSFET fits a wide range of electronic systems, providing versatility in design applications.

Additional Details

The 2SJ464(PP,F) is engineered to operate seamlessly in environments demanding high reliability and precision. It is a go-to component for developing innovative solutions that require cutting-edge performance without compromising energy efficiency or operational integrity. The MOSFET's advanced package design assists in mitigating overheating issues, thereby reducing maintenance and enhancing performance reliability. Its utility does not only lie in traditional electronics but also in next-gen technology sectors where performance and efficiency are non-negotiable requisites.

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