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2SJ103-Y

Part No 2SJ103-Y
Manufacturer Toshiba Semiconductor and Storage
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 06+
Reference case TO-92
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 751263-2SJ103-Y
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SJ103-Y CAD Model

Description

The 2SJ103-Y is a P-channel Junction Field-Effect Transistor (JFET) manufactured by Toshiba Semiconductor and Storage. The "-Y" likely designates a specific IDSS (drain to source saturation current) rank. This JFET is designed for low-noise amplifier applications, particularly in audio preamplifiers and instrumentation. It is known for its high input impedance, low noise figure, and excellent linearity.

Applications

  • Audio Preamplifiers: Used as the input stage in high-quality audio preamplifiers to minimize noise and distortion.
  • Microphone Amplifiers: Employed in microphone amplifiers for professional audio recording.
  • Instrumentation Amplifiers: Used in instrumentation amplifiers for precise measurement of low-level signals.
  • Mixers: Utilized in mixer circuits for signal processing.
  • High-Impedance Buffers: Used as high-impedance buffers to isolate sensitive circuits.

Features

  • P-Channel JFET: P-channel junction field-effect transistor.
  • Low Noise: Optimized for low-noise performance in sensitive amplifier circuits.
  • High Input Impedance: Provides high input impedance to minimize loading effects.
  • High Transconductance: Offers high transconductance for efficient signal amplification.
  • Excellent Linearity: Exhibits excellent linearity, minimizing distortion in amplifier circuits.

Benefits

  • Improved Audio Quality: Minimizes noise and distortion in audio amplifier circuits.
  • Precise Signal Amplification: Enables precise amplification of low-level signals in instrumentation applications.
  • Reduced Loading Effects: High input impedance minimizes loading effects on signal sources.
  • Enhanced System Performance: Improves overall system performance in sensitive amplifier circuits.
  • Stable Operation: Provides stable operation over a wide range of operating conditions.

Specifications

The 2SJ103-Y typically has a drain-source voltage (VDS) rating of -25V, a drain current (IDSS) rating ranging from 2.6 mA to 6.5mA for the Y rank. The gate-source cutoff voltage (VGS(off)) is typically around -0.5V to -4V. The noise figure is typically very low, contributing to its excellent low-noise performance. The device is typically available in a through-hole package. Always refer to the official Toshiba datasheet for the 2SJ103-Y for the most accurate and detailed specifications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3063 $58.7835
110+ $1.0718 $117.8980
170+ $1.0383 $176.5110
230+ $1.0049 $231.1270
300+ $0.9714 $291.4200
400+ $0.8709 $348.3600
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Availability: 15,560 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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