The 2SC5065 is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for use in VHF/UHF power amplifiers. It provides high power gain and efficiency, making it suitable for communication equipment and high-frequency applications.

Applications

• VHF/UHF power amplifiers
• Communication equipment
• High-frequency oscillators
• RF Transmitters
• Mobile Radio Systems

Features

• NPN Silicon Epitaxial Planar Transistor
• High Power Gain
• High Efficiency
• Low Noise Figure
• Excellent Linearity

Benefits

• Provides high output power with minimal input power.
• Reduces power consumption due to its high efficiency.
• Ensures clear signal amplification with minimal noise.
• Suitable for high-frequency applications.
• Increases the communication range and signal quality in radio systems.

Technical Specifications

The 2SC5065 has a collector-base voltage (VCBO) of 60V, a collector-emitter voltage (VCEO) of 30V, and an emitter-base voltage (VEBO) of 3.5V. The collector current (IC) is rated at 3A, and the collector power dissipation (PC) is 20W. Its transition frequency (fT) is typically 150 MHz. It is commonly used in applications requiring robust performance and high reliability at VHF/UHF frequencies. The operating temperature range is -55°C to +150°C. Its packaging is designed for efficient heat dissipation.