The 2SC4793(F) is an NPN silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for high-frequency power amplification applications.

Applications

• High-frequency power amplifiers
• RF amplifiers
• Oscillators
• High-speed switching circuits
• Driver stages in audio amplifiers

Features

• High Collector Power Dissipation: Provides robust performance in demanding applications.
• High Transition Frequency (fT): Enables operation in high-frequency circuits.
• Low Collector Output Capacitance: Minimizes signal distortion and improves high-frequency performance.
• Excellent Linearity: Ensures accurate signal amplification.
• Pb-free (RoHS compliant): Environmentally friendly.

Benefits

• Increased amplifier efficiency: Allows for less power consumption.
• Improved signal quality: Provides lower distortion and noise.
• Higher operating frequencies: Suitable for modern communication systems.
• More reliable performance: Offers stable operation under various conditions.
• Environmentally compliant: Meets regulatory requirements.

Additional Details

Technical Specifications (Typical):

• Collector-Base Voltage (VCBO): 60 V
• Collector-Emitter Voltage (VCEO): 50 V
• Emitter-Base Voltage (VEBO): 5 V
• Collector Current (IC): 3 A
• Collector Power Dissipation (PC): 20 W
• Transition Frequency (fT): 180 MHz
• Current Gain (hFE): Typically between 100 and 320 (depending on the specific lot and test conditions).

Package: TO-220

The 2SC4793(F) is commonly used in applications requiring amplification of high-frequency signals. It is important to consult the official Toshiba datasheet for detailed specifications and application notes before using this transistor in any circuit design. The (F) suffix may denote a specific production lot or characteristic, which should be verified in the datasheet.