The 2SC4738 is a silicon NPN epitaxial planar transistor produced by Toshiba Semiconductor and Storage. This transistor is designed for high-frequency amplification and switching applications. It features a low collector-emitter saturation voltage and a high transition frequency, making it suitable for use in various RF and high-speed circuits.

Applications

• High-frequency amplifiers
• Oscillators
• Mixers
• Switching circuits
• RF Modulators

Features

• NPN Silicon Epitaxial Planar Transistor
• High Transition Frequency (fT)
• Low Collector-Emitter Saturation Voltage
• Excellent Linearity
• Small Signal Amplifier

Benefits

• Provides efficient amplification at high frequencies.
• Enables low-loss switching operation.
• Facilitates the design of stable and reliable circuits.
• Reduces power consumption in switching applications.
• Suitable for compact circuit designs due to its small size.

Technical Specifications

The 2SC4738 has a collector-base voltage (VCBO) of 30V, a collector-emitter voltage (VCEO) of 20V, and an emitter-base voltage (VEBO) of 3V. The collector current (IC) is rated at 50mA, and the collector power dissipation (PC) is 200mW. Its transition frequency (fT) is typically 2.5 GHz. The operating junction temperature range is -55°C to +150°C. The hFE (DC current gain) is within a specified range depending on the specific grade. It is typically housed in a small plastic package for easy mounting.