The 2SC2713 is a silicon NPN epitaxial planar transistor from Toshiba Semiconductor and Storage. It is designed for use in low-noise amplifier applications within VHF and UHF bands. Its low noise figure makes it suitable for sensitive receiver front-ends and signal processing circuits where minimal signal degradation is essential.

Applications:

• VHF/UHF low-noise amplifiers
• Oscillators
• Mixers
• RF front-ends
• High-frequency signal processing circuits

Features:

• Low noise figure (NF) for excellent signal-to-noise ratio
• High gain-bandwidth product (fT) for high-frequency performance
• High collector current (Ic) capability
• Epitaxial planar structure for enhanced reliability
• Small signal amplifier

Benefits:

• Improved receiver sensitivity due to low noise
• Excellent high-frequency amplification
• Stable performance in demanding applications
• Long operational life
• Reduced signal distortion

Additional Details:

The 2SC2713 is typically supplied in a small signal package suitable for surface mounting on printed circuit boards. Key electrical specifications include a collector-emitter voltage (Vceo) of 25V, a collector current (Ic) of 50mA, and a power dissipation (Pc) of 200mW. The noise figure is typically around 1.8dB at 200MHz. The transition frequency (fT) is typically 1.2GHz. This transistor's characteristics make it well-suited for use in professional communication equipment, high-end consumer electronics, and other applications where low-noise amplification is critical.