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2SC2712-BL(TE85R,F

Part No 2SC2712-BL(TE85R,F
Manufacturer Toshiba Semiconductor and Storage
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Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 815220-2SC2712-BL(TE85R,F
Ultra Librarian 3D Model Ultra Librarian 2SC2712-BL(TE85R,F CAD Model

Description

The 2SC2712-BL(TE85R,F is an NPN silicon epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It's designed for low-noise amplifier applications, particularly in the VHF and UHF bands. The transistor features a low noise figure and high gain, making it ideal for sensitive receiver circuits, high-frequency amplification stages, and various communication devices. Its robust construction and stable electrical characteristics contribute to its reliability in diverse operating conditions.

Applications:

  • Low-noise amplifiers (LNAs) in VHF and UHF receivers.
  • RF front-end circuits for communication devices.
  • Oscillator circuits in high-frequency applications.
  • Mixer stages in communication systems.
  • Instrumentation and measurement equipment.

Features:

  • NPN Configuration: Standard NPN transistor configuration for versatile circuit design.
  • Low Noise Figure: Minimizes noise contribution in amplifier stages, enhancing signal clarity.
  • High Gain: Provides efficient amplification of weak signals.
  • High Transition Frequency (fT): Suitable for high-frequency applications.
  • Epitaxial Planar Structure: Ensures stable electrical characteristics and reliability.

Benefits:

  • Improved Receiver Sensitivity: Low noise figure enhances the ability to detect weak signals.
  • Enhanced Signal Quality: Minimizes noise and distortion in amplified signals.
  • Efficient Amplification: High gain provides effective amplification with minimal power consumption.
  • Versatile Application: Suitable for a wide range of high-frequency amplifier applications.
  • Reliable Performance: Toshiba's quality ensures consistent and stable operation.

The 2SC2712-BL(TE85R,F transistor delivers excellent performance in low-noise amplifier applications, ensuring minimal noise contribution and high gain. Its epitaxial planar structure contributes to its stable electrical characteristics and overall reliability. The transistor's design is optimized for high-frequency operation, making it suitable for VHF and UHF bands. The 'BL' suffix indicates the gain ranking, while '(TE85R,F' relates to tape and reel packaging specifications. The specific datasheet provided by Toshiba includes detailed specifications, such as maximum ratings, noise figure, and gain characteristics. It is commonly used in communication devices, instrumentation, and other high-performance electronic systems requiring low-noise amplification. The device is typically packaged in a small surface-mount package for integration onto modern PCBs.

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