The 2SC2552 is a silicon NPN epitaxial planar transistor from Toshiba Semiconductor. It is specifically designed for use in high-frequency power amplifier applications, particularly in VHF and UHF bands. This transistor features high power gain and excellent linearity, making it well-suited for various communication and broadcasting systems.

Applications

• VHF/UHF power amplifiers
• FM transmitters
• Television transmitters
• Mobile radio equipment
• High-frequency oscillators and mixers

Features

• NPN Silicon Epitaxial Planar Transistor
• High Power Gain: Offers substantial signal amplification.
• Excellent Linearity: Minimizes signal distortion in amplified signals.
• High Collector Current: Capable of handling high-power operation.
• Low Feedback Capacitance: Enhances the stability of amplifier circuits.

Benefits

• Efficient Power Amplification: High power gain ensures efficient signal boosting.
• Reduced Signal Distortion: Excellent linearity maintains signal integrity.
• Reliable Performance: Designed for stable operation in demanding conditions.
• Versatile Usage: Suitable for a wide range of high-frequency power applications.
• Improved Stability: Low feedback capacitance prevents unwanted oscillations.

Technical Specifications

The 2SC2552 typically has a collector-emitter voltage (VCEO) of around 30V, a collector current (IC) of approximately 1.5A, and a power dissipation (PC) of about 7W. It exhibits a high transition frequency (fT), usually in the hundreds of MHz, enabling it to operate effectively in VHF and UHF frequency ranges. This transistor is generally packaged in a small plastic package, facilitating easy integration into various electronic circuits.

This transistor finds application in communication equipment, broadcasting systems, and diverse industrial uses where high-frequency power amplification is essential. Its robust design and excellent electrical characteristics make it a reliable component for demanding applications requiring consistent and efficient performance.