The 2SC1682-GR is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for low noise amplifier applications, particularly in the VHF band. Its key feature is its low noise figure and high gain characteristics, making it suitable for sensitive receiver circuits and signal amplification stages.

Applications:

• Low Noise Amplifiers (LNA)
• VHF Receivers
• RF Amplifiers
• Oscillator Circuits
• Mixer Circuits

Features:

• Low Noise Figure: Optimized for minimal noise contribution in amplifier circuits.
• High Gain: Provides significant signal amplification with minimal distortion.
• Epitaxial Planar Structure: Ensures high reliability and consistent performance.
• NPN Silicon Transistor: A standard and widely used transistor type.
• Green Compound: Meets environmental standards for lead-free manufacturing.

Benefits:

• Improved Signal Reception: Enables clearer and more reliable signal reception in VHF receivers.
• Enhanced Amplifier Performance: Boosts the gain and reduces noise in amplifier circuits.
• Reliable Operation: Offers stable and consistent performance over a wide range of operating conditions.
• Easy Integration: Can be easily integrated into existing circuit designs.
• Environmentally Friendly: Complies with environmental regulations for lead-free products.

Additional Details:

The 2SC1682-GR is typically packaged in a small signal transistor package, such as a TO-92 or similar. Key electrical specifications include a collector-emitter voltage (VCEO) of around 25V, a collector current (IC) of approximately 50mA, and a transition frequency (fT) in the GHz range. The noise figure is typically around 1.5 dB at 200 MHz. It's important to consult the official Toshiba datasheet for precise specifications and application notes to ensure optimal performance in your specific circuit design. The "GR" suffix often indicates a specific gain grouping or other performance characteristic, so refer to the datasheet for details.