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2SB531

Part No 2SB531
Manufacturer Toshiba Semiconductor and Storage
Catalog Custom Parts (0 - A)
Description Silicon PNP Triple Diffused Mesa Transistor
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1192105-2SB531
Categories Custom Parts
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SB531 CAD Model

Description

The 2SB531 is a PNP Epitaxial Planar Transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in low-frequency power amplifier applications. This transistor is known for its relatively high collector current and voltage ratings, making it suitable for audio amplifiers and general-purpose switching circuits.

Applications

  • Audio Amplifiers: Used as a driver or output stage transistor in audio amplifiers.
  • Power Switching: Employed in switching circuits for controlling DC loads.
  • General-Purpose Amplification: Found in various amplifier circuits for signal boosting.
  • Voltage Regulators: Utilized in linear voltage regulator circuits.
  • Motor Control Circuits: Used as a switching element in motor control applications.

Features

  • PNP Polarity: Offers complementary functionality to NPN transistors.
  • High Collector Current: Capable of handling relatively large collector currents.
  • High Collector-Emitter Voltage: Can withstand high voltages between the collector and emitter.
  • Low Saturation Voltage: Minimizes power dissipation during switching.
  • High Power Dissipation: Designed to handle significant power levels.

Benefits

  • Versatile Application: Suitable for a wide range of amplification and switching tasks.
  • High Performance: Provides reliable performance in demanding circuits.
  • Efficient Switching: Low saturation voltage minimizes power loss.
  • Robust Design: Capable of handling high voltage and current levels.
  • Easy to Use: Standard transistor configuration simplifies circuit design.

Additional Details

The 2SB531 typically comes in a TO-92 or similar through-hole package. It has a relatively high DC current gain (hFE), allowing it to amplify small input signals significantly. The maximum collector current (IC) and collector-emitter voltage (VCEO) are important parameters to consider when selecting this transistor for a specific application. Toshiba's datasheets provide detailed information on these and other characteristics.

For detailed specifications such as the DC current gain range, saturation voltage, power dissipation rating, and thermal resistance, consult the official Toshiba datasheet for the 2SB531. The datasheet provides comprehensive information on the transistor's electrical characteristics, thermal performance, and application notes.

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