The 2SA1408-O is a PNP epitaxial silicon transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in amplifier and high-speed switching applications.

Applications

• Audio amplifiers
• High-speed switching circuits
• Driver stages in electronic circuits
• Analog signal processing circuits
• General-purpose amplification

Features

• High collector current (IC = -1.5 A)
• Low saturation voltage
• High fT (transition frequency) for high-speed applications
• Excellent hFE linearity
• Complementary to NPN transistor 2SC3601

Benefits

• Provides high gain and low distortion in amplifier circuits.
• Enables efficient switching performance in high-speed applications.
• Allows for design of complementary circuits with the 2SC3601 NPN transistor.
• Reduces power dissipation due to low saturation voltage.
• Ensures stable and predictable performance across a wide range of operating conditions.

Additional Details

The 2SA1408-O has a collector-emitter voltage (VCEO) of -50 V, a collector-base voltage (VCBO) of -60 V, and an emitter-base voltage (VEBO) of -5 V. The collector current (IC) is rated at -1.5 A, and the collector power dissipation (PC) is 1 W. The current gain (hFE) typically ranges from 100 to 320. The transition frequency (fT) is typically 100 MHz. This transistor is commonly used in audio amplifier designs due to its low distortion and high gain characteristics. It is available in a through-hole package.