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1SS418(TL3AP,E

Part No 1SS418(TL3AP,E
Manufacturer Toshiba Semiconductor and Storage
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Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 814965-1SS418(TL3AP,E
Ultra Librarian 3D Model Ultra Librarian 1SS418(TL3AP,E CAD Model

Description

The 1SS418(TL3AP,E is a high-speed switching diode manufactured by Toshiba Semiconductor and Storage. It is designed for applications requiring fast switching speeds and low forward voltage drop. This diode is commonly used in high-frequency circuits, switching power supplies, and protection circuits. This diode offers similar characteristics to the 1SS352 but may vary in specific electrical parameters or package type.

Applications

  • High-frequency rectification: Rectifying high-frequency signals in communication and signal processing circuits.
  • Switching power supplies: Providing fast switching in DC-DC converters and other power supply circuits.
  • Protection circuits: Protecting sensitive circuits from voltage spikes and transients.
  • Signal clamping: Clamping voltage levels to protect against overvoltage conditions.
  • Small signal switching: Switching small signals in electronic circuits.

Features

  • High-speed switching: Provides fast switching speeds for high-frequency applications.
  • Low forward voltage drop: Minimizes power dissipation and improves efficiency.
  • Small package size: Allows for compact circuit designs.
  • High reliability: Ensures stable performance and long life.
  • Surface mount technology (SMT): Facilitates automated assembly.

Benefits

  • Improved circuit performance: Fast switching speeds enhance the performance of high-frequency circuits.
  • Increased efficiency: Low forward voltage drop minimizes power losses.
  • Reduced circuit size: Small package size allows for compact designs.
  • Enhanced system reliability: High reliability ensures stable operation.
  • Cost-effective solution: Provides a balance of performance and affordability.

Technical Specifications

The 1SS418(TL3AP,E likely has a low forward voltage drop, typically around 0.4V at a forward current of 10mA. Its reverse recovery time is typically less than 4ns. The maximum repetitive peak reverse voltage is generally around 80V. The diode is typically available in a small surface-mount package. Refer to the Toshiba datasheet for detailed specifications, including forward current ratings, reverse leakage current, and thermal characteristics. Specific parameters may differ slightly from the 1SS352 series.

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