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KTC3198-Y A1G

Part No KTC3198-Y A1G
Manufacturer Taiwan Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 0.15A TO92 / Bipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 500 mW Through Hole TO-92
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Taiwan Semiconductor Corporation
Package Tape & Box (TB)
Transistor Type NPN
Current - Collector (Ic) (Max) 150 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA, 6V
Power - Max 500 mW
Frequency - Transition 80MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92
Base Product Number KTC3198
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names KTC3198-YA1G,KTC3198-Y A1G-ND
Standard Package 4,000
Win Source Part Number 1068124-KTC3198-Y A1G
Ultra Librarian 3D Model Ultra Librarian KTC3198-Y A1G CAD Model

Description

The Taiwan Semiconductor Corporation KTC3198-Y A1G 1068124-KTC3198-Y A1G is a bipolar transistor that is NPN type.

  • Power max: 500mW
  • Voltage collector emitter breakdown: 50V
  • Current collector: 150mA
  • VCE saturation @ max: 250mV @ 10mA, 100mA
  • Current collector cutoff @ max: 100nA (ICBO)
  • DC current gain (hFE) @ min: 70 @ 2mA, 6V
  • Frequency transition: 80MHz
  • Operating temperature range: from -55°C to 150°C

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