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Same model may have multiple batches, images only for reference.
HERAF1007G Real Image
Same model may have multiple batches, images only for reference.

HERAF1007G

Part No HERAF1007G
Manufacturer Taiwan Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 800V 10A ITO220AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Taiwan Semiconductor
Package Tube
Product Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 800 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 80 ns
Current - Reverse Leakage @ Vr 10 µA @ 800 V
Capacitance @ Vr, F 60pF @ 4V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack
Supplier Device Package ITO-220AC
Operating Temperature - Junction -55°C ~ 150°C
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 597362-HERAF1007G
Ultra Librarian 3D Model Ultra Librarian HERAF1007G CAD Model

Description

The 597362-HERAF1007G is a single rectifier diode from Taiwan Semiconductor.

  • Use: Discrete semiconductor products, rectifiers
  • Recovery Time: Fast, less than 500ns
  • Currents: Handles currents greater than 200mA
  • Reverse Voltage: 800 V (maximum)
  • Rectified Current: 10A (average)
  • Forward Voltage: 1.7 V @ 10 A
  • Reverse Recovery Time: 80 ns
  • Reverse Leakage Current: 10 µA @ 800 V
  • Package Type: TO-220-2 Full Pack
  • Mountable: Through-hole
  • Product Status: Active

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