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SPN1026S56RGB

Part No SPN1026S56RGB
Manufacturer SYNC POWER Crop
Catalog Electronic Wholesale
Description Dual N-Channel Enhancement Mode MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer SYNC POWER Crop
Win Source Part Number 1257946-SPN1026S56RGB
Manufacturer Homepage www.syncpower.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPN1026S56RGB CAD Model

Description

The SPN1026S56RGB is a power MOSFET from SYNC POWER Crop, engineered for high-efficiency power switching applications.

Applications:

  • DC-DC Converters
  • Power Management Circuits
  • Synchronous Rectification
  • Load Switching
  • Motor Control Applications
  • LED Lighting Systems

Features:

  • Low On-Resistance (RDS(on)): Reduces conduction losses for improved efficiency.
  • Fast Switching Speed: Minimizes switching losses, enhancing overall system performance.
  • Low Gate Charge (Qg): Reduces gate drive requirements, simplifying the drive circuitry.
  • Avalanche Rated: Provides robustness against voltage transients and inductive kickback.
  • RoHS Compliant: Meets environmental standards for the restriction of hazardous substances.
  • Surface Mount Package: Suitable for automated assembly and compact designs.

Benefits:

  • Increased Power Efficiency: Low RDS(on) and fast switching speed contribute to higher efficiency.
  • Reduced Heat Dissipation: Minimizes power losses, leading to lower operating temperatures.
  • Enhanced System Reliability: Avalanche rating provides protection against voltage spikes.
  • Simplified Board Layout: Surface mount package simplifies PCB design and assembly.
  • Environmentally Compliant: RoHS compliance ensures adherence to environmental regulations.

Additional Details:

The SPN1026S56RGB typically utilizes a surface-mount package designed for optimal thermal dissipation. The specific package details, including dimensions, pinout, and thermal resistance, can be found in the manufacturer's datasheet. It's important to consult the datasheet for critical electrical parameters such as drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), pulsed drain current (IDM), and power dissipation (PD). This MOSFET is suitable for applications demanding high efficiency, reliability, and compact size.

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