The VN0206N3 is a N-Channel enhancement mode vertical DMOS FET manufactured by Supertex. It is designed for high-voltage switching applications, featuring a high breakdown voltage and low gate charge. This MOSFET is commonly used in solid-state relays, high-voltage pulse generators, and display drivers.

Applications

• Solid-state relays
• High-voltage pulse generators
• Display drivers
• Piezoelectric transducer drivers
• Level shifting

Features

• High breakdown voltage
• Low gate charge
• Fast switching speed
• Low on-resistance (RDS(on))
• Avalanche rated
• RoHS compliant

Benefits

• High-voltage operation: Withstands high voltages, making it suitable for applications requiring high voltage switching.
• Fast switching: Enables high-frequency operation in pulse generators and other switching circuits.
• Low drive power: Low gate charge minimizes the drive power requirements, simplifying the drive circuitry.
• Robust performance: Avalanche rating ensures reliable operation under transient voltage conditions.
• Environmentally friendly: RoHS compliance ensures the device does not contain hazardous substances.

The VN0206N3 is available in a variety of through-hole and surface-mount packages, such as TO-92 and SOT-23. The device's high input impedance simplifies the design of driving circuits. The drain-source on-resistance (RDS(on)) depends on the gate-source voltage applied. Proper heat sinking may be required depending on the application and power dissipation levels. Refer to the datasheet for specific operating conditions and performance characteristics.

Technical Specifications (Typical):

• Drain-Source Voltage (VDS): 200V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 250mA
• On-Resistance (RDS(on)): 7.5 Ω at VGS = 10V
• Total Gate Charge (Qg): 1.5 nC