The T810H-6G is a high-performance thyristor manufactured by STMicroelectronics, designed to cater to a wide range of applications requiring fast switching and robust operational parameters. This device is well-suited for phase control in converters, motor control circuits, and as a switching element in various power management tasks.
Key Features
- High Surge Capability: The T810H-6G is capable of handling surge currents effectively, making it an ideal choice for applications that experience short-term overloads.
- High Junction Temperature: With a maximum operating junction temperature of 125°C, this thyristor can withstand high-temperature environments, ensuring reliability and longevity.
- Low On-state Voltage: This feature minimizes conduction losses and improves overall efficiency during operation.
- Gate Trigger Current: A low gate trigger current (IGT) makes the device easy to drive and control, even with simple gate drive circuits.
Electrical Characteristics
| Parameter |
Value |
| Repetitive Peak Off-state Voltage (VDRM) |
600V |
| Non-repetitive Peak Off-state Voltage (VDSM) |
660V |
| Average On-state Current (IT(AV)) |
8A |
| Gate Trigger Current (IGT) |
15mA |
Applications
The versatility of the T810H-6G allows it to be used in a variety of settings, including but not limited to:
- AC phase control applications
- Motor control drivers
- Industrial power tools
- Lighting control systems
- Overvoltage crowbar protection
Combining robust performance with STMicroelectronics' commitment to quality, the T810H-6G thyristor is a reliable component for designers and engineers looking to enhance the efficiency and durability of their power control systems.