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STW70N60M2

Part No STW70N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Excellent output capacitance
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II Plus
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 118nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5200pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 450W (Tc)
Rds On (Maximum) @ Id, Vgs 40 mOhm @ 34A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 1262391-STW70N60M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STW70N60M2
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STW70N60M2 CAD Model

Description

STW70N60M2 - Power MOSFET by STMicroelectronics

The STW70N60M2 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in the semiconductor industry. This MOSFET is part of the MDmesh™ M2 series, which is renowned for its excellent energy efficiency and high power density. The device is designed to handle a continuous drain current of up to 70A, making it suitable for a variety of demanding applications.

Key Features

  • Voltage Rating: The STW70N60M2 operates at a drain-source voltage (V<sub>DS) of up to 600V, providing a wide safety margin for applications that experience high voltage transients.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of just 0.036 Ohm, this MOSFET offers minimal conduction losses, enhancing the efficiency of the application it is used in.
  • High Current Capacity: The device can handle a continuous drain current (I<sub>D) of 70A, making it capable of powering high-current circuits without overheating or performance degradation.
  • Fast Switching Speed: Fast switching capabilities reduce switching losses and improve performance in high-frequency power conversion systems.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) facilitates faster switching and reduced driving power, which is particularly beneficial in applications where efficiency is paramount.
  • 100% Avalanche Tested: Ensures reliability and robustness against repetitive avalanche conditions.

Applications

The STW70N60M2 is versatile and can be used in a wide range of applications. It is particularly well-suited for:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • High-performance DC-DC converters
  • Motor control applications
  • LED lighting solutions

Quality and Reliability

STMicroelectronics is committed to providing products that meet the highest standards of quality and reliability. The STW70N60M2 is no exception, with rigorous testing protocols in place to ensure that each device meets the stringent requirements necessary for industrial and commercial use. With its robust design and advanced manufacturing techniques, the STW70N60M2 is a power MOSFET that engineers can rely on for their high-voltage and high-power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3583 $51.8826
46+ $2.2090 $101.6140
71+ $2.1344 $151.5424
101+ $1.9851 $200.4951
131+ $1.9105 $250.2755
164+ $1.8359 $301.0876
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Availability: 42,707 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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