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STW62N65M5

Part No STW62N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Automotive-grade N-channel 650 V, 0.041 typ., 46 A MDmesh V Power MOSFET in a TO-247 package
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh V
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 142nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6420pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 330W (Tc)
Rds On (Maximum) @ Id, Vgs 49 mOhm @ 23A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 1262384-STW62N65M5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STW62N65M5
Introduction Date June 19, 2013
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2031
Ultra Librarian 3D Model Ultra Librarian STW62N65M5 CAD Model

Description

STW62N65M5 - Power MOSFET by STMicroelectronics

The STW62N65M5 is a state-of-the-art power MOSFET designed by STMicroelectronics, a leader in semiconductor solutions. This device is a part of their MDmesh™ M5 series, which is renowned for its high efficiency and performance in a wide range of power applications. The STW62N65M5 is crafted to meet the demands of modern high-efficiency power conversion systems, including switched-mode power supplies (SMPS), lighting applications, welding equipment, solar inverters, and more.

With a drain-source voltage (VDS) of 650V, the STW62N65M5 is well-suited for high-voltage operations. It features a low on-resistance (RDS(on)) of just 0.036 Ω, minimizing conduction losses and improving overall efficiency. The power MOSFET also boasts a maximum continuous drain current (ID) of 41 A, making it capable of handling significant power levels without compromising performance.

One of the key advantages of the STW62N65M5 is its enhanced power density, which is a result of STMicroelectronics' innovative MDmesh™ technology. This technology combines a vertical structure with a proprietary strip layout, offering an optimal balance between on-resistance and capacitance, leading to reduced switching losses and better dynamic performance.

The device is housed in a TO-247 long leads package, which is known for its robustness and excellent thermal characteristics. This ensures that the MOSFET can operate reliably even under high temperature and stress conditions. Additionally, the package is designed to facilitate easy mounting on a heatsink, further enhancing its thermal management capabilities.

For designers and engineers looking for a power MOSFET with high reliability, the STW62N65M5 includes several built-in protection features. It is equipped with a 100% avalanche tested design, ensuring safe operation under extreme conditions. Moreover, the device is compliant with the RoHS directive, making it an environmentally friendly choice for power applications.

In summary, the STW62N65M5 from STMicroelectronics is a high-performance power MOSFET that combines efficiency, power density, and reliability. It is an excellent choice for a wide array of high-voltage power conversion applications where performance and durability are of utmost importance.

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Quantity Unit Price Ext. Price
7+ $7.9714 $55.7998
14+ $7.4572 $104.4008
21+ $7.2000 $151.2000
30+ $6.6857 $200.5710
39+ $6.4286 $250.7154
49+ $6.1715 $302.4035
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Availability: 18,000 pieces
MOQ: 7 pcs
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