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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh K5
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1200V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 44.2nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1370pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 250W (Tc)
Rds On (Maximum) @ Id, Vgs 690 mOhm @ 6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 1262336-STW12N120K5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STW12N120K5
Introduction Date August 23, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian STW12N120K5 CAD Model

Description

STW12N120K5 - N-channel 1200 V, 0.52 ohm typ., 12 A MDmesh™ K5 Power MOSFET in a TO-247 package

The STW12N120K5 is a high voltage N-channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This Power MOSFET is part of the MDmesh™ K5 series, which is known for its exceptional efficiency and performance in high voltage applications. The device is encapsulated in a TO-247 package, which is widely used for its robustness and ability to handle high current levels.

The STW12N120K5 boasts an impressive 1200 V breakdown voltage, making it an excellent choice for applications that require a high blocking voltage. This feature is particularly useful in industrial, lighting, medical, and consumer applications where high voltage operation is crucial. The device's low on-resistance of just 0.52 ohms typ. ensures minimal power loss and better overall efficiency, which is critical for energy-sensitive designs.

With a continuous current rating of 12 A, the STW12N120K5 can handle significant power levels, making it suitable for a wide range of power conversion applications such as switching power supplies, motor control, and power inverters. The MOSFET's fast switching speed and low gate charge are beneficial for high-frequency circuits, reducing switching losses and improving the overall performance of the application.

STMicroelectronics has engineered the STW12N120K5 with state-of-the-art MDmesh™ K5 technology, which utilizes a proprietary vertical structure. This technology ensures a low gate charge and low capacitances, which are key factors for high-efficiency power switching. The device also features a 100% avalanche tested design, ensuring reliability and robustness under harsh operating conditions.

In summary, the STW12N120K5 from STMicroelectronics is a powerful and reliable component for designers looking to optimize their high voltage power conversion systems. Its high breakdown voltage, low on-resistance, and fast switching characteristics make it a versatile choice for a multitude of applications requiring efficient power management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.0181 $56.1267
15+ $7.5106 $112.6590
24+ $7.2568 $174.1632
34+ $6.7493 $229.4762
44+ $6.4957 $285.8108
54+ $6.2419 $337.0626
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 30,000 pieces
MOQ: 7 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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