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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 15A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 15 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 90 µA @ 1200 V
Capacitance @ Vr, F 1200pF @ 0V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Operating Temperature - Junction -40°C ~ 175°C
Base Product Number STPSC15
Other Names 497-17162
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1282001-STPSC15H12DY
Ultra Librarian 3D Model Ultra Librarian STPSC15H12DY CAD Model

Description

STPSC15H12DY - Silicon Carbide Power Schottky Diode

The STPSC15H12DY from STMicroelectronics is a high-performance silicon carbide (SiC) power Schottky diode designed to offer superior efficiency in power electronics systems. This diode is part of ST's SiC diode family that leverages the robustness and thermal performance of silicon carbide, making it an ideal choice for high-end applications requiring efficiency and reliability.

Key Features

  • No Reverse Recovery Charge: The STPSC15H12DY has no reverse recovery charge, which results in reduced switching losses and improved system efficiency, especially in high-frequency applications.
  • High Surge Current Capability: This diode is capable of handling high surge currents, thus offering robust performance during transient conditions.
  • High Junction Temperature: With a maximum junction temperature of 175°C, it can operate under extreme thermal conditions, ensuring reliability in challenging environments.
  • Low Leakage Current: The low leakage current characteristic of this diode minimizes power loss when the diode is in the off state, contributing to the overall energy-saving features of the system.

Applications

The STPSC15H12DY is suitable for a broad range of applications, including:

  • Switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • High-frequency converters and inverters
  • Energy storage systems
  • Electric vehicle (EV) charging stations
  • Photovoltaic inverters

Technical Specifications

The diode features a repetitive peak reverse voltage (V<sub>RRM) of 1200 V and an average forward current (I<sub>F(AV)) of 15 A. Its forward voltage drop (V<sub>F) is particularly low, further enhancing the efficiency of the power conversion system. The STPSC15H12DY comes in a TO-220AC package, which is widely used and ensures compatibility with many circuit designs.

Conclusion

The STPSC15H12DY is a testament to STMicroelectronics' commitment to providing advanced semiconductor solutions that meet the demands of modern power electronics. With its exceptional performance and reliability, this silicon carbide power Schottky diode is an excellent choice for designers looking to optimize their systems for efficiency and thermal management.

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