STPSC12065G-TR - Schottky Silicon Carbide Diode

The STPSC12065G-TR from STMicroelectronics is a state-of-the-art Schottky Silicon Carbide (SiC) diode, designed to offer superior switching performance and higher reliability compared to Silicon-based diodes. With its Silicon Carbide technology, this diode is an ideal choice for high-efficiency, high-frequency applications where low power losses are crucial.

Key Features

• No Reverse Recovery: The STPSC12065G-TR exhibits no reverse recovery charge, which significantly reduces switching losses and enhances the efficiency of power conversion systems.
• High Temperature Operation: This diode is capable of operating at junction temperatures as high as 175°C, making it suitable for high-temperature environments and demanding applications.
• Low Forward Voltage Drop: It offers a low forward voltage drop, which reduces conduction losses and improves overall system efficiency.
• High Surge Current Capability: The device can handle high surge currents without failure, ensuring reliability and robustness in applications where surge conditions are common.

Applications

The STPSC12065G-TR is ideal for a variety of applications, including:

• Power Supply Units (PSUs)
• Solar Inverters
• Power Factor Correction (PFC) circuits
• High-frequency converters and inverters
• Automotive charging systems

Product Specifications

The STPSC12065G-TR comes in a surface-mount DPAK (TO-252) package and is characterized by the following specifications:

• Repetitive Peak Reverse Voltage (V_RRM): 650 V
• Average Forward Current (I_F(AV)): 12 A
• Non-repetitive Forward Surge Current (I_FSM): 100 A
• Operating Junction Temperature (T_j): -40°C to +175°C

With these features and specifications, the STPSC12065G-TR is a highly efficient, reliable, and versatile component that enhances the performance of energy-sensitive systems across a wide range of industrial, automotive, and consumer applications.