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STPSC10H065GY-TR

Part No STPSC10H065GY-TR
Manufacturer STMicroelectronics
Catalog Diodes, Rectifiers - Single
Description DIODE SCHTY SIC 650V 10A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 44 Weeks
Features Diode Silicon Carbide Schottky 650 V 10A Surface Mount D²PAK
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101
Package Reel - TR
Speed No Recovery Time > 500mA (Io)
Mounting Surface Mount
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package D2PAK
Family Name STPSC10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Part Number 497-16322-1, 497-16322-6, 497-16322-2
Quantity per package 1000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898398-STPSC10H065GY-TR
Ultra Librarian 3D Model Ultra Librarian STPSC10H065GY-TR CAD Model

Description

STPSC10H065GY-TR Silicon Carbide Power Schottky Diode by STMicroelectronics

The STPSC10H065GY-TR is a cutting-edge Silicon Carbide (SiC) Power Schottky Diode designed and manufactured by STMicroelectronics, a global semiconductor leader. This diode is part of ST's SiC diode portfolio, which is renowned for its efficiency and thermal performance. The STPSC10H065GY-TR is particularly suited for high-efficiency, high-frequency power converters, thanks to its no reverse recovery charge and temperature-independent switching behavior.

With a voltage rating of 650V and a forward current of 10A, the STPSC10H065GY-TR is capable of handling demanding applications such as solar inverters, UPS systems, power factor correction circuits, and high-performance power supplies. Its robustness is further enhanced by its high surge current capability, making it reliable in even the most challenging conditions.

The diode comes in a surface-mount TO-247 package, which is designed for optimal thermal transfer and easy integration into various electronic assemblies. The package is also characterized by its high junction temperature capability, which ensures stable operation over a wide temperature range.

Key features of the STPSC10H065GY-TR include:

  • Low forward voltage drop (VF) for higher efficiency and reduced heat dissipation.
  • No reverse recovery time, leading to decreased switching losses and improved system efficiency.
  • High-frequency operation capability, enabling smaller passive components and compact system design.
  • Excellent thermal performance and stability, thanks to Silicon Carbide material properties.
  • High surge current capability, providing robustness and reliability.

The STPSC10H065GY-TR is not only a testament to STMicroelectronics' commitment to innovation in power electronics but also an essential component for design engineers looking to create more efficient, compact, and reliable power conversion systems. With its superior characteristics, this SiC Power Schottky Diode is an excellent choice for modern high-performance applications.

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